US 11,987,740 B2
Silicon nitride film etching composition and etching method using the same
Dong Hyun Kim, Yongin-si (KR); Hyeon Woo Park, Yongin-si (KR); Sung Jun Hong, Yongin-si (KR); Myung Ho Lee, Hwaseong-si (KR); Myung Geun Song, Yongin-si (KR); Hoon Sik Kim, Yongin-si (KR); Jae Jung Ko, Seoul (KR); Myong Euy Lee, Yongin-si (KR); and Jun Hyeok Hwang, Seoul (KR)
Assigned to ENF Technology Co., Ltd., Yongin-si (KR)
Filed by ENF TECHNOLOGY CO., LTD., Yongin-si (KR)
Filed on Aug. 30, 2021, as Appl. No. 17/446,408.
Claims priority of application No. 10-2020-0121512 (KR), filed on Sep. 21, 2020.
Prior Publication US 2022/0089951 A1, Mar. 24, 2022
Int. Cl. C09K 13/06 (2006.01); H01L 21/311 (2006.01)
CPC C09K 13/06 (2013.01) [H01L 21/31111 (2013.01)] 13 Claims
 
1. A silicon nitride film etching composition comprising: 60 to 90 wt % of a phosphoric acid, 0.01 to 5.00 wt % of a silsesquioxane, and a residual amount of water, with respect to a total weight of the silicon nitride film etching composition.