CPC C04B 35/48 (2013.01) [C04B 35/2641 (2013.01); C04B 35/2675 (2013.01); C04B 35/624 (2013.01); C04B 35/6261 (2013.01); C04B 35/6262 (2013.01); C04B 35/62655 (2013.01); C04B 35/62675 (2013.01); C04B 35/64 (2013.01); C04B 35/645 (2013.01); C04B 41/0027 (2013.01); C04B 41/009 (2013.01); C04B 41/80 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3248 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3272 (2013.01); C04B 2235/3274 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3294 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/442 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/604 (2013.01); C04B 2235/608 (2013.01); C04B 2235/77 (2013.01); C04B 2235/79 (2013.01); H01P 1/2084 (2013.01); H01P 1/36 (2013.01); H01P 1/38 (2013.01); H01P 11/008 (2013.01)] | 21 Claims |
1. A radiofrequency device including a high dielectric garnet material, the radiofrequency device comprising:
a component formed from a synthetic garnet material having a structure including dodecahedral sites, the structure having bismuth occupying at least some of the dodecahedral sites, the structure having indium occupying an octahedral site, indium occupying at least some of the dodecahedral sites, and the structure having a dielectric constant value of at least 31.
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