US 11,987,504 B2
Garnet compound, sintered body and sputtering target containing same
Kazuyoshi Inoue, Sodegaura (JP); Shigekazu Tomai, Sodegaura (JP); and Masatoshi Shibata, Sodegaura (JP)
Assigned to IDEMITSU KOSAN CO., LTD., Tokyo (JP)
Filed by IDEMITSU KOSAN CO., LTD., Tokyo (JP)
Filed on Jul. 8, 2022, as Appl. No. 17/860,678.
Application 17/860,678 is a division of application No. 16/325,170, granted, now 11,447,398, previously published as PCT/JP2017/030508, filed on Aug. 25, 2017.
Claims priority of application No. 2016-169427 (JP), filed on Aug. 31, 2016; and application No. 2016-196257 (JP), filed on Oct. 4, 2016.
Prior Publication US 2022/0340442 A1, Oct. 27, 2022
Int. Cl. H01B 1/08 (2006.01); C01G 15/00 (2006.01); C04B 35/01 (2006.01); C04B 35/44 (2006.01); C04B 35/50 (2006.01); C23C 14/34 (2006.01); C04B 35/64 (2006.01); H01J 37/34 (2006.01)
CPC C01G 15/006 (2013.01) [C01G 15/00 (2013.01); C04B 35/01 (2013.01); C04B 35/44 (2013.01); C04B 35/50 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01B 1/08 (2013.01); C01P 2002/72 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01); C04B 35/64 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/764 (2013.01); C04B 2235/77 (2013.01); C04B 2235/80 (2013.01); C04B 2235/9638 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An oxide semiconductor film obtained by sputtering a sputtering target, comprising an oxide sintered body, comprising:
a garnet phase represented by a general formula (I):
Ln3In2Ga3-XAlxO12  (I)
wherein,
Ln represents one or more metal elements selected from the group consisting of Nd and Sm X satisfies an expression 0≤X<3, and
a bixbyite phase represented by In2O3.