US 11,987,494 B2
Wire-bond damper for shock absorption
Tsung-Lin Hsieh, Hsinchu (TW); Wei-Jhih Mao, Hsinchu (TW); Shang-Ying Tsai, Pingzhen (TW); Kuei-Sung Chang, Kaohsiung (TW); and Chun-Wen Cheng, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 8, 2021, as Appl. No. 17/194,492.
Claims priority of provisional application 63/117,518, filed on Nov. 24, 2020.
Prior Publication US 2022/0162058 A1, May 26, 2022
Int. Cl. B81B 7/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 7/0058 (2013.01) [B81C 1/00333 (2013.01); B81B 2203/0307 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a microelectromechanical systems (MEMS) package, wherein the method comprises:
mounting a support substrate on a package substrate;
mounting a MEMS structure on the support substrate, wherein the MEMS structure comprises a movable mass configured to move over the support substrate, and further comprises a first conductive pad and a second conductive pad that are on a top of the movable mass and that are laterally spaced from each other;
performing one or more wire-bonding processes to form an out-of-plane (OoP) wire-bond damper on a top surface of the movable mass; and
mounting a housing structure to the package substrate, wherein the housing structure covers and surrounds the MEMS structure;
wherein the OoP wire-bond damper is formed comprising a first arch-shaped wire, and wherein a first wire-bonding process of the one or more wire-bonding processes forms the first arch-shaped wire arching continuously from direct contact with the first conductive pad to direct contact with the second conductive pad.