US 11,986,921 B2
Chemical mechanical polishing apparatus, chemical mechanical polishing method and method for fabricating semiconductor device
Myung-Ki Hong, Uiwang-si (KR); Yong Hee Lee, Seoul (KR); Byoung Ho Kwon, Changwon-si (KR); and Kun Tack Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 12, 2021, as Appl. No. 17/401,105.
Claims priority of application No. 10-2020-0133978 (KR), filed on Oct. 16, 2020.
Prior Publication US 2022/0118582 A1, Apr. 21, 2022
Int. Cl. B24B 37/015 (2012.01); B24B 37/20 (2012.01); B24B 53/017 (2012.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01)
CPC B24B 37/015 (2013.01) [B24B 37/20 (2013.01); B24B 53/017 (2013.01); H01L 21/30625 (2013.01); H01L 21/67219 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for chemical mechanical polishing, comprising;
providing a polishing pad;
supplying a first purging compound having a first temperature onto the polishing pad;
supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound;
supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad; and
supplying a second slurry having a fourth temperature lower than the third temperature on to the polishing pad supplied with the second purging compound.