CPC B01D 67/0062 (2013.01) [B01D 69/02 (2013.01); B01D 69/06 (2013.01); B01D 69/12 (2013.01); C12Q 1/6869 (2013.01); C25F 3/02 (2013.01); C25F 3/14 (2013.01); C25F 7/00 (2013.01); G01N 33/48721 (2013.01); B01D 2323/42 (2013.01); B01D 2325/021 (2013.01); B01D 2325/06 (2013.01); B82Y 40/00 (2013.01)] | 1 Claim |
1. A method of forming a plurality of apertures in a solid state membrane using dielectric breakdown, wherein the membrane comprises a first surface area portion on one side of the membrane and a second surface area portion on the other side of the membrane, and each of a plurality of target regions comprises a recess or fluidic passage in the membrane that opens out into the first or second surface area portion, the method comprising:
contacting all of the first surface area portion of the membrane with a first bath comprising ionic solution and all of the second surface area portion with a second bath comprising ionic solution; and
applying a voltage across the membrane via first and second electrodes in respective contact with the first and second baths comprising ionic solutions to form an aperture at each of a plurality of the target regions in the membrane;
wherein:
the membrane comprises a first layer and a second layer; and
the formation of an aperture at each of the plurality of target regions occurs by dielectric breakdown through at least a portion of the second layer, wherein the second layer is formed by atomic layer deposition;
wherein the second layer comprises a plurality of sub-layers, each sub-layer formed by atomic layer deposition, wherein the plurality of sublayers comprises a sequence of sub-layers that repeats a plurality of times, each repeating sequence comprising at least a first sub-layer and a second sub-layer directly adjacent to the first sub-layer;
wherein the first sub-layers are non-epitaxial with respect to the second sub-layers;
wherein the first sub-layers comprise HfO2 and the second sub-layers comprise Al2O3.
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