US 11,659,779 B2
Memory cell and method of forming the same
Wen Xiao, Singapore (SG); Wendong Song, Singapore (SG); Jun Ding, Singapore (SG); and Ernult Franck Gerard, Singapore (SG)
Assigned to Agency for Science, Technology and Research, Singapore (SG); and National University of Singapore, Singapore (SG)
Appl. No. 16/977,411
Filed by Agency for Science, Technology and Research, Singapore (SG); and National University of Singapore, Singapore (SG)
PCT Filed Mar. 8, 2019, PCT No. PCT/SG2019/050128
§ 371(c)(1), (2) Date Sep. 1, 2020,
PCT Pub. No. WO2019/190392, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 10201802567Q (SG), filed on Mar. 28, 2018.
Prior Publication US 2021/0013407 A1, Jan. 14, 2021
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01); H01L 45/00 (2006.01)
CPC H01L 45/1273 (2013.01) [H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A memory cell comprising:
an active electrode consisting of an active electrode material;
a first noble electrode in contact with the active electrode, the first noble electrode being a patterned electrode comprising a noble electrode material;
a resistive switching layer in contact with the active electrode and the first noble electrode; and
a second noble electrode comprising a noble electrode material, the second noble electrode in contact with the resistive switching layer;
wherein the first noble electrode comprises a grid comprising a plurality of openings;
wherein the first noble electrode is configured to block current from flowing through;
wherein portions of the resistive switching layer in contact with the active electrode, and extending within the plurality of openings of the grid form conduction channels such that one or more conduction paths are formed in the conduction channels when a potential difference is applied along one direction across the resistive switching layer;
wherein the active electrode material is selected from a group consisting of titanium (Ti), nickel (Ni), tantalum (Ta), hafnium (Hf), and aluminum (Al) such that the active electrode and the resistive switching layer form a Schottky barrier of 1.1 eV or below; and
wherein the first noble electrode and the resistive switching layer form a Schottky barrier of 1.2 eV or above.