US 11,659,758 B2
Display unit, display module, and electronic device
Taisuke Kamada, Niiza (JP); Ryo Hatsumi, Hadano (JP); Daisuke Kubota, Atsugi (JP); Naoaki Hashimoto, Sagamihara (JP); Tsunenori Suzuki, Yokohama (JP); Harue Osaka, Atsugi (JP); and Satoshi Seo, Sagamihara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jun. 29, 2020, as Appl. No. 16/914,530.
Claims priority of application No. JP2019-126332 (JP), filed on Jul. 5, 2019.
Prior Publication US 2021/0005669 A1, Jan. 7, 2021
Int. Cl. H01L 27/28 (2006.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01)
CPC H01L 27/288 (2013.01) [H01L 27/307 (2013.01); H01L 27/323 (2013.01); H01L 27/3244 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5284 (2013.01); H01L 2251/552 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A display unit comprising:
a substrate;
a light-receiving device over the substrate, the light-receiving device comprising:
a first pixel electrode;
an active layer comprising a first organic compound; and
a common electrode over the first pixel electrode;
a light-emitting device over the substrate, the light-emitting device comprising:
a second pixel electrode;
a hole-injection layer over the second pixel electrode, the hole-injection layer comprising a first compound and a second compound;
a light-emitting layer over the second pixel electrode, the light-emitting layer comprising a second organic compound;
an electron-transport layer over the second pixel electrode, the electron-transport layer comprising an electron-transport material; and
the common electrode over the second pixel electrode, the hole-injection layer, the light-emitting layer and the electron-transport layer;
a resin layer between the substrate and the common electrode; and
a light-blocking layer between the resin layer and the common electrode,
wherein the resin layer comprises an opening overlapping with the light-receiving device,
wherein the resin layer and the light-emitting device overlap each other,
wherein the common electrode, the active layer and the first pixel electrode overlap one another,
wherein the common electrode, the light-emitting layer and the second pixel electrode overlap one another,
wherein the hole-injection layer is in contact with one of the second pixel electrode and the common electrode,
wherein the second organic compound is different from the first organic compound,
wherein the first compound has a property of accepting electrons from the second compound,
wherein the second compound has a Highest Occupied Molecular Orbital (HOMO) level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV,
wherein the electron-transport material has a Highest Occupied Molecular Orbital (HOMO) level higher than or equal to −6.0 eV, and
wherein the electron-transport material has an electron mobility higher than or equal to 1×10−7 cm2/Vs and lower than or equal to 5×10−5 cm2/Vs when a square root of electric field strength is 600 (V/cm)1/2.