US 11,659,747 B2
Display apparatus including an uneven structure, and method of manufacturing the same
Zhongshou Huang, Shanghai (CN)
Assigned to SEEYA OPTRONICS CO., LTD., Shanghai (CN)
Filed by SEEYA OPTRONICS CO., LTD., Shanghai (CN)
Filed on Dec. 2, 2020, as Appl. No. 17/109,365.
Claims priority of application No. 202010327470.4 (CN), filed on Apr. 23, 2020.
Prior Publication US 2021/0335985 A1, Oct. 28, 2021
Int. Cl. H01L 27/32 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01)
CPC H10K 59/131 (2023.02) [H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 59/122 (2023.02); H10K 71/00 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A display apparatus, comprising:
a substrate;
a first electrode layer comprising a plurality of pixelated first electrodes and disposed on a surface of the substrate;
an organic multilayer comprising a first-type carrier auxiliary layer, a light-emitting layer and a second-type carrier auxiliary layer and disposed on a surface of the first electrode layer;
a second electrode layer disposed on a surface of the organic multilayer;
a plurality of OLED lighting elements arranged in a matrix on the substrate, each of the plurality of OLED lighting elements comprising a portion of the organic multilayer sandwiched by the pixelated first electrodes and the second electrode layer; and
a rough surface structure including randomly distributed humps and depressions disposed underneath the first-type carrier auxiliary layer between adjacent OLED lighting elements; wherein
in a direction away from the substrate, the first-type carrier auxiliary layer comprises a hole injection layer, a hole transport layer, and an electron blocking layer and the second-type carrier auxiliary layer comprises hole blocking layer, an electron transport layer, and an electron injection layer; or the first-type carrier auxiliary layer comprises a hole blocking layer, an electron transport layer, and an electron injection layer and the second-type carrier auxiliary layer comprises a hole injection layer, a hole transport layer, and an electron blocking layer,
a roughness of the rough surface structure is characterized by an average amplitude AR in a direction perpendicular to the substrate and an average cycle length GR in parallel to the substrate,
the average amplitude AR and an average cycle length GR satisfy 0.2D<AR<5D, and 0.2D<GR<10D; or satisfy AR>D and GR>AR, and
D denotes a total thickness of the first-type carrier auxiliary layer, the light-emitting layer, the second-type carrier auxiliary layer, and the second electrode layer.