US 11,659,731 B2
Integrated light-emitting device and fabricating method thereof
Hui Lei, Huizhou (CN); Weiran Cao, Huizhou (CN); and Lei Qian, Huizhou (CN)
Assigned to TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Appl. No. 16/976,314
Filed by TCL Technology Group Corporation, Huizhou (CN)
PCT Filed Jul. 24, 2019, PCT No. PCT/CN2019/097492
§ 371(c)(1), (2) Date Aug. 27, 2020,
PCT Pub. No. WO2020/020223, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 201810826539.0 (CN), filed on Jul. 25, 2018.
Prior Publication US 2021/0175474 A1, Jun. 10, 2021
Int. Cl. H01L 51/52 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01)
CPC H01L 51/5271 (2013.01) [H01L 51/0037 (2013.01); H01L 51/5064 (2013.01); H01L 51/5215 (2013.01); H01L 51/5234 (2013.01); H01L 51/56 (2013.01); H01L 2251/5369 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated light-emitting device, comprising: a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated;
wherein the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure formed by removing a remaining SiO2 and etching the insulating layer, and the nano-pit array structure is configured for condensing light and is concaved toward inside of the insulating layer; and
the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit being configured to emit light toward the first electrode along the second electrode.