US 11,659,725 B2
Quantum dot light emitting device with electron auxiliary layer and display device including the same
Heejae Lee, Seongnam-si (KR); Sung Woo Kim, Hwaseong-si (KR); Eun Joo Jang, Suwon-si (KR); Dae Young Chung, Suwon-si (KR); and Moon Gyu Han, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 6, 2020, as Appl. No. 16/921,188.
Claims priority of application No. 10-2019-0081628 (KR), filed on Jul. 5, 2019.
Prior Publication US 2021/0005834 A1, Jan. 7, 2021
Int. Cl. H01L 51/50 (2006.01)
CPC H01L 51/502 (2013.01) [H01L 51/5056 (2013.01); H01L 51/5092 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a first electrode and a second electrode with a surface facing the first electrode;
an emission layer disposed between the first electrode and the second electrode and comprising a quantum dot; and
an electron auxiliary layer disposed between the emission layer and the second electrode,
wherein the electron auxiliary layer comprises a first layer proximate to the emission layer and comprising a plurality of nanoparticles comprising a first metal oxide, and a second layer disposed on the first layer and proximate to the second electrode, the second layer comprising a second metal oxide,
wherein an interface roughness between the second layer and the surface of the second electrode is less than about 10 nanometers as determined by an electron microscopy analysis,
wherein the first metal oxide is represented by Chemical Formula 1:
Zn1−xMxO  Chemical Formula 1
in the above formula, M is Mg, Ca, Zr, W, Li, Ti, Y, Al, or a combination thereof, and x is greater than 0 and less than or equal to 0.5, and
wherein the second layer does not include a metal oxide nanoparticle.