US 11,659,719 B2
Semiconductor device
Kilho Lee, Busan (KR); and Gwanhyeob Koh, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 21, 2021, as Appl. No. 17/381,768.
Application 17/381,768 is a continuation of application No. 16/848,010, filed on Apr. 14, 2020, granted, now 11,121,175.
Claims priority of application No. 10-2019-0122468 (KR), filed on Oct. 2, 2019.
Prior Publication US 2021/0351233 A1, Nov. 11, 2021
Int. Cl. H01L 27/00 (2006.01); H01L 27/22 (2006.01); G11C 11/02 (2006.01); G11C 11/56 (2006.01)
CPC H01L 27/228 (2013.01) [G11C 11/02 (2013.01); G11C 11/5614 (2013.01)] 20 Claims
OG exemplary drawing
1. A semiconductor device, comprising:
a substrate;
a first conductive pattern on the substrate;
a second conductive pattern on the substrate, the first conductive pattern and the second conductive pattern are laterally spaced apart from each other;
a first contact on the first conductive pattern;
a second contact on the first contact;
an upper barrier layer extending from between the first contact and the second contact to a lateral surface of the second contact;
a magnetic tunnel junction on the second contact, the first contact, the second contact and the magnetic tunnel junction are connected in series;
a through electrode on the second conductive pattern; and
upper conductive patterns connected with the magnetic tunnel junction and the through electrode.