US 11,659,715 B2
Semiconductor memory device and method of operating the semiconductor memory device
Kun Young Lee, Seoul (KR); Sun Young Kim, Andong-si (KR); and Jae Gil Lee, Seoul (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Dec. 23, 2021, as Appl. No. 17/561,471.
Application 17/561,471 is a continuation of application No. 16/888,057, filed on May 29, 2020, granted, now 11,244,960.
Claims priority of application No. 10-2019-0126163 (KR), filed on Oct. 11, 2019.
Prior Publication US 2022/0115404 A1, Apr. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/11597 (2017.01); H01L 27/1159 (2017.01)
CPC H01L 27/11597 (2013.01) [H01L 27/1159 (2013.01)] 14 Claims
OG exemplary drawing
1. A method of operating a semiconductor memory device, in a program operation of a memory cell comprising a conductive pattern, a channel structure, and a storage pattern and a ferroelectric pattern between the conductive pattern and the channel structure, the ferroelectric pattern including a plurality of domains having different crystal structures, the method comprising:
applying a program voltage to the conductive pattern so that a charge is trapped in the storage pattern; and
applying a polarization change voltage to the conductive pattern so that the ferroelectric pattern has various polarization orientations.