US 11,659,711 B2
Three-dimensional memory device including discrete charge storage elements and methods of forming the same
Yuki Kasai, Yokkaichi (JP); Shigehisa Inoue, Yokkaichi (JP); Tomohiro Asano, Yokkaichi (JP); and Raghuveer S. Makala, Campbell, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Nov. 5, 2020, as Appl. No. 17/90,420.
Application 17/090,420 is a continuation in part of application No. 16/849,600, filed on Apr. 15, 2020, granted, now 11,387,244.
Prior Publication US 2021/0327897 A1, Oct. 21, 2021
Int. Cl. H10B 43/27 (2023.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01)
CPC H01L 27/11582 (2013.01) [H01L 27/1157 (2013.01); H01L 27/11565 (2013.01)] 5 Claims
OG exemplary drawing
 
5. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate;
memory openings vertically extending through the alternating stack; and
memory opening fill structures located in the memory openings, wherein:
each of the memory opening fill structures comprises a vertical semiconductor channel and a memory film; and
the memory film comprises a tunneling dielectric layer and a vertical stack of discrete charge storage elements that are vertically spaced apart from each other by lateral protrusion portions of a subset of the insulating layers;
wherein:
each of the subset of the insulating layers comprises silicon oxide and has a uniform thickness region having a respective uniform thickness;
an upper surface portion of the uniform thickness region is doped nitrogen atoms such that atomic concentration of nitrogen atoms increases with a vertical distance from the substrate; and
a lower surface portion of the uniform thickness region is doped with nitrogen atomic such that atomic concentration of nitrogen atoms decreases with the vertical distance from the substrate.