US 11,658,652 B2
Semiconductor device
Yo Habu, Tokyo (JP); and Akihisa Yamamoto, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Oct. 19, 2020, as Appl. No. 17/73,566.
Claims priority of application No. JP2019-224421 (JP), filed on Dec. 12, 2019.
Prior Publication US 2021/0184668 A1, Jun. 17, 2021
Int. Cl. H03K 3/00 (2006.01); H03K 17/081 (2006.01); H03K 17/082 (2006.01); H03K 17/16 (2006.01); H03K 17/687 (2006.01); H03K 17/0812 (2006.01)
CPC H03K 17/08122 (2013.01) [H03K 17/687 (2013.01)] 11 Claims
OG exemplary drawing
1. A semiconductor device comprising:
a detection circuit connected between a positive electrode and a negative electrode of a semiconductor switching element,
the detection circuit including a current source and a first resistor element which are connected in series via a first node between the positive electrode and the negative electrode, the first resistor element having a first electrical resistance value,
the current source operating such that an output current of the current source increases toward a saturated constant value as a voltage of the positive electrode with respect to a voltage of the negative electrode becomes higher,
the semiconductor device further comprising a voltage comparator to output a comparison result between a DC voltage input to a second node and a voltage of the first node,
the DC voltage and the first electrical resistance value being set in such a manner that when an inter-electrode voltage between the positive electrode and the negative electrode becomes higher than a predefined determination voltage, the voltage of the first node is higher than the DC voltage, and
the detection circuit and the voltage comparator being mounted on the same integrated circuit.