US 11,658,651 B1
Radio frequency switch circuit and operating method thereof
Shinhaeng Heo, Suwon-si (KR); Byeonghak Jo, Suwon-si (KR); Wonsun Hwang, Suwon-si (KR); and Hyunjin Yoo, Suwon-si (KR)
Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed on Jul. 14, 2022, as Appl. No. 17/864,494.
Claims priority of application No. 10-2021-0194189 (KR), filed on Dec. 31, 2021.
Int. Cl. H04B 1/44 (2006.01); H03K 17/04 (2006.01); H04B 1/00 (2006.01); H04B 1/401 (2015.01)
CPC H03K 17/04 (2013.01) [H04B 1/006 (2013.01); H04B 1/401 (2013.01); H04B 1/44 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A radio frequency (RF) switch circuit, comprising:
a first switch disposed between a transmitting port and an antenna port, and comprising a plurality of first transistors;
a second switch disposed between the antenna port and a receiving port, and comprising a plurality of second transistors; and
a switch control circuit configured to:
generate control voltages to control the plurality of first transistors and the plurality of second transistors,
applying, in a transmitting mode, a first Off voltage from among the generated control voltages to turn off at least one first transistor among the plurality of first transistors, and turn off at least one first transistor among the plurality of second transistors, and
applying, in a receiving mode, a second Off voltage from among the generated control voltages to turn off at least one second transistor among the plurality of first transistors and turn off at least one second transistor among the plurality of second transistors,
wherein the second Off voltage is greater than the first Off voltage.