US 11,658,479 B2
Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
Radhakrishnan Sithanandam, Greater Noida (IN); Divya Agarwal, Noida (IN); Ghislain Troussier, Voiron (FR); Jean Jimenez, Saint Theoffrey (FR); and Malathi Kar, Delhi (IN)
Assigned to STMicroelectronics International N.V., Schiphol (NL); and STMicroelectronics SA, Montrouge (FR)
Filed by STMicroelectronics International N.V., Schiphol (NL); and STMicroelectronics SA, Montrouge (FR)
Filed on Sep. 9, 2020, as Appl. No. 17/15,695.
Application 17/015,695 is a division of application No. 15/951,806, filed on Apr. 12, 2018, granted, now 11,063,429.
Prior Publication US 2020/0412124 A1, Dec. 31, 2020
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01)
CPC H02H 9/046 (2013.01) [H01L 27/0255 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 27/0285 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD) protection circuit, comprising:
a first power supply line;
a second power supply line;
a first MOSFET device of a first conductivity type;
a second MOSFET device of said first conductivity type;
wherein source-drain paths of the first and second MOSFET devices are connected in series between the first power supply line and the second power supply line; and
a trigger circuit configured to generate, in response to detection of an ESD event at one or more of the first and second power supply lines, one or more trigger signals for application to gate terminals of the first and second MOSFET devices.