US 11,658,463 B2
Light-emitting element and method for manufacturing the same
Tomoyuki Oki, Kanagawa (JP); Yuji Masui, Kanagawa (JP); Yoshinori Yamauchi, Tokyo (JP); Rintaro Koda, Tokyo (JP); and Takahiro Arakida, Tokyo (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by Sony Corporation, Tokyo (JP)
Filed on Oct. 9, 2020, as Appl. No. 17/67,451.
Application 14/735,755 is a division of application No. 14/518,382, filed on Oct. 20, 2014, granted, now 9,252,565, issued on Feb. 2, 2016.
Application 17/067,451 is a continuation of application No. 16/173,226, filed on Oct. 29, 2018, granted, now 10,833,479.
Application 16/173,226 is a continuation of application No. 15/810,690, filed on Nov. 13, 2017, granted, now 10,153,613, issued on Dec. 11, 2018.
Application 15/810,690 is a continuation of application No. 15/272,181, filed on Sep. 21, 2016, granted, now 9,941,662, issued on Apr. 10, 2018.
Application 15/272,181 is a continuation of application No. 14/823,868, filed on Aug. 11, 2015, granted, now 9,407,064, issued on Aug. 2, 2016.
Application 14/823,868 is a continuation of application No. 14/735,755, filed on Jun. 10, 2015, granted, now 9,484,713, issued on Nov. 1, 2016.
Application 14/518,382 is a continuation of application No. 14/273,067, filed on May 8, 2014, abandoned.
Application 14/273,067 is a continuation of application No. 12/078,681, filed on Apr. 3, 2008, granted, now 8,761,221, issued on Jun. 24, 2014.
Claims priority of application No. 2007-109654 (JP), filed on Apr. 18, 2007.
Prior Publication US 2021/0098971 A1, Apr. 1, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/183 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01S 5/223 (2006.01); H01S 5/187 (2006.01); B82Y 20/00 (2011.01); H01S 5/042 (2006.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/18 (2021.01); H01S 5/125 (2006.01)
CPC H01S 5/18308 (2013.01) [B82Y 20/00 (2013.01); H01S 5/02251 (2021.01); H01S 5/02253 (2021.01); H01S 5/04252 (2019.08); H01S 5/125 (2013.01); H01S 5/18 (2013.01); H01S 5/187 (2013.01); H01S 5/18311 (2013.01); H01S 5/22 (2013.01); H01S 5/221 (2013.01); H01S 5/2231 (2013.01); H01S 5/343 (2013.01); H01S 5/34313 (2013.01); H01S 5/04254 (2019.08); H01S 5/18338 (2013.01); H01S 5/3432 (2013.01); H01S 2301/176 (2013.01); H01S 2301/18 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A light-emitting element comprising:
a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,
wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;
a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided;
at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided;
a first electrode electrically connected to the first compound semiconductor layer; and
a second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second compound semiconductor layer of the mesa structure through the bridge structure,
wherein the active layer comprises GaInAs.