US 11,658,460 B2
Engineered current-density profile diode laser
Paul O. Leisher, Dublin, CA (US); Robert J. Deri, Pleasanton, CA (US); and Susant K. Patra, Brentwood, CA (US)
Assigned to LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, Livermore, CA (US)
Appl. No. 17/41,256
Filed by Lawrence Livermore National Security, LLC, Livermore, CA (US)
PCT Filed Mar. 26, 2019, PCT No. PCT/US2019/024134
§ 371(c)(1), (2) Date Sep. 24, 2020,
PCT Pub. No. WO2019/191134, PCT Pub. Date Oct. 3, 2019.
Claims priority of provisional application 62/648,286, filed on Mar. 26, 2018.
Prior Publication US 2021/0057879 A1, Feb. 25, 2021
Int. Cl. H01S 5/042 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/042 (2013.01) [H01S 5/343 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A engineered current-density profile diode laser, comprising:
a first portion of semiconductor material;
a quantum well active region on said first portion of semiconductor material;
a second portion of said semiconductor material on said active region;
a metal contact on said second portion of said semiconductor material; and
a plurality of current vias located between said quantum well active region and said metal contact.