US 11,658,459 B2
Techniques for laser alignment in photonic integrated circuits
Roe Hemenway, Painted Post, NY (US); Cristian Stagarescu, Ithaca, NY (US); Daniel Meerovich, Somerset, NJ (US); Malcolm R. Green, Lansing, NY (US); Wolfgang Parz, Ithaca, NY (US); Jichi Ma, Ithaca, NY (US); Richard Robert Grzybowski, Corning, NY (US); and Nathan Bickel, Ithaca, NY (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Jul. 16, 2018, as Appl. No. 16/36,454.
Application 16/036,454 is a continuation of application No. 15/436,474, filed on Feb. 17, 2017, granted, now 10,027,087.
Claims priority of provisional application 62/297,735, filed on Feb. 19, 2016.
Prior Publication US 2018/0342851 A1, Nov. 29, 2018
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/026 (2006.01); G02B 6/42 (2006.01); H01S 5/023 (2021.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01); H01S 5/02326 (2021.01); H01S 5/02345 (2021.01); H01S 5/02375 (2021.01); H01S 5/32 (2006.01); H01S 5/10 (2021.01); H01S 5/00 (2006.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01)
CPC G02B 6/423 (2013.01) [G02B 6/42 (2013.01); G02B 6/4232 (2013.01); H01S 5/023 (2021.01); H01S 5/026 (2013.01); H01S 5/0233 (2021.01); H01S 5/0235 (2021.01); H01S 5/02326 (2021.01); H01S 5/02345 (2021.01); H01S 5/02375 (2021.01); G02B 6/4238 (2013.01); H01S 5/005 (2013.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/1082 (2013.01); H01S 5/1085 (2013.01); H01S 5/3211 (2013.01)] 33 Claims
OG exemplary drawing
 
1. A photonic integrated circuit (PIC), comprising:
a semiconductor laser comprising a laser mating surface and a contact surface, the laser mating surface comprising a tapered laser mating surface and a laser facet, the laser facet being completely set back to a position between where the tapered laser mating surface is narrower and the tapered laser mating surface is wider; and
a substrate comprising a tapered substrate mating surface and a recessed landing area formed in the substrate, wherein the tapered substrate mating surface is configured to contact the tapered laser mating surface of the semiconductor laser, and wherein the recessed landing area comprises a contact pad configured to form an electrical connection with the contact surface of the semiconductor laser.