US 11,658,456 B2
Manufacturable multi-emitter laser diode
Dan Steigerwald, Cupertino, CA (US); Melvin McLaurin, Santa Barbara, CA (US); Eric Goutain, Fremont, CA (US); Alexander Sztein, Santa Barbara, CA (US); Po Shan Hsu, Arcadia, CA (US); Paul Rudy, Fremont, CA (US); and James W. Raring, Santa Barbara, CA (US)
Assigned to KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed by KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed on May 12, 2021, as Appl. No. 17/318,896.
Application 15/351,326 is a division of application No. 14/600,506, filed on Jan. 20, 2015, granted, now 9,520,697, issued on Dec. 13, 2016.
Application 17/318,896 is a continuation of application No. 16/791,652, filed on Feb. 14, 2020, granted, now 11,011,889, issued on May 18, 2021.
Application 16/791,652 is a continuation of application No. 15/351,326, filed on Nov. 14, 2016, granted, now 10,566,767, issued on Feb. 18, 2020.
Application 14/600,506 is a continuation in part of application No. 14/312,427, filed on Jun. 23, 2014, granted, now 9,379,525, issued on Jun. 28, 2016.
Application 14/312,427 is a continuation in part of application No. 14/176,403, filed on Feb. 10, 2014, granted, now 9,362,715, issued on Jun. 7, 2016.
Prior Publication US 2021/0344164 A1, Nov. 4, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/22 (2006.01); H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01)
CPC H01S 5/0087 (2021.01) [H01S 5/0202 (2013.01); H01S 5/0203 (2013.01); H01S 5/0215 (2013.01); H01S 5/0216 (2013.01); H01S 5/0218 (2013.01); H01S 5/04253 (2019.08); H01S 5/04256 (2019.08); H01S 5/22 (2013.01); H01S 5/34333 (2013.01); H01S 5/4012 (2013.01); H01S 5/4031 (2013.01); H01S 5/4087 (2013.01); H01S 5/4093 (2013.01); H01S 5/005 (2013.01); H01S 5/0217 (2013.01); H01S 5/04257 (2019.08); H01S 5/4056 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system comprising:
a laser bar including a multi-emitter laser diode device;
a package configured to enclose the laser bar; and
an application configured with the laser bar, the laser bar comprising:
a carrier chip singulated from a carrier wafer, the carrier chip being characterized by a length and a width;
a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip with a bonding material at a bond region, the substrate having multiple epitaxial mesa dice regions positioned at an epitaxial wafer die pitch, the epitaxial wafer die pitch being designated as a first pitch; each of the epitaxial mesa dice regions arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining a distance between adjacent epitaxial mesa dice regions, each of the plurality of epitaxial mesa dice regions comprising epitaxial material; the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the at least one active layer;
a plurality of laser diode stripe regions formed in a ridge region in a top portion of the plurality of epitaxial mesa dice regions and away from the bonding material in the bond region;
each of the laser diode stripe regions configured with a pair of facets wherein a first facet is configured on a first end of the stripe region and a second facet is configured on the second end of the stripe region to form a cavity region; and
wherein a pair of the laser diode stripe regions is spaced by a third pitch from an adjacent pair of the laser diode stripe regions, wherein the pair of the laser diode stripe regions form a multiple-stripe laser die, where the second pitch is equal to or greater than the first pitch, and the third pitch is greater than the second pitch.