US 11,658,392 B2
Package structure
Nan-Chin Chuang, Taipei (TW); Chen-Hua Yu, Hsinchu (TW); Chung-Shi Liu, Hsinchu (TW); Chao-Wen Shih, Hsinchu County (TW); and Shou-Zen Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 18, 2021, as Appl. No. 17/351,256.
Application 17/351,256 is a continuation of application No. 16/671,182, filed on Nov. 1, 2019, granted, now 11,043,731.
Application 16/671,182 is a continuation of application No. 15/879,456, filed on Jan. 25, 2018, granted, now 10,483,617, issued on Nov. 19, 2019.
Claims priority of provisional application 62/565,107, filed on Sep. 29, 2017.
Prior Publication US 2021/0313671 A1, Oct. 7, 2021
Int. Cl. H01Q 1/22 (2006.01); H01Q 1/52 (2006.01); H01Q 19/30 (2006.01); H01Q 21/00 (2006.01); H01Q 21/24 (2006.01); H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01Q 15/14 (2006.01); H01Q 21/28 (2006.01)
CPC H01Q 1/2283 (2013.01) [H01L 23/3107 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/13 (2013.01); H01Q 1/22 (2013.01); H01Q 1/52 (2013.01); H01Q 1/526 (2013.01); H01Q 19/30 (2013.01); H01Q 21/0087 (2013.01); H01Q 21/24 (2013.01); H01L 23/3128 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/18 (2013.01); H01L 2924/19102 (2013.01); H01L 2924/3025 (2013.01); H01Q 15/14 (2013.01); H01Q 21/28 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a first semiconductor die, encapsulated in a first insulating encapsulation;
a first antenna and a second antenna, electrically coupled to the first semiconductor die, wherein the first antenna and the second antenna are arranged independently next to or atop of the first semiconductor die, and wherein the first antenna generates an electromagnetic wave propagating along a first direction, the second antenna generates an electromagnetic wave propagating along a second direction, and the first direction is different from the second direction; and
a first metallic layer, located between the first antenna and the second antenna and over the first semiconductor die, wherein a portion of the first metallic layer is electrically connected to the first semiconductor die and another portion of the first metallic layer is electrically isolated from the first semiconductor die.