US 11,658,300 B2
Anodes for lithium-based energy storage devices, and methods for making same
John C. Brewer, Rochester, NY (US); Kevin Tanzil, Rochester, NY (US); Paul D. Garman, Pittsford, NY (US); and Robert G. Anstey, Tonawanda, NY (US)
Assigned to Graphenix Development, Inc., Williamsville, NY (US)
Filed by Graphenix Development, Inc., Willamsville, NY (US)
Filed on Aug. 12, 2020, as Appl. No. 16/991,623.
Claims priority of provisional application 62/886,177, filed on Aug. 13, 2019.
Prior Publication US 2021/0050593 A1, Feb. 18, 2021
Int. Cl. H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 4/66 (2006.01); H01M 4/38 (2006.01); H01G 11/68 (2013.01); H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01M 4/134 (2010.01); H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/136 (2010.01); H01M 4/485 (2010.01); H01M 4/58 (2010.01); H01M 4/64 (2006.01); H01M 4/525 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/62 (2013.01) [H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01G 11/68 (2013.01); H01M 4/0404 (2013.01); H01M 4/0428 (2013.01); H01M 4/0452 (2013.01); H01M 4/0471 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/136 (2013.01); H01M 4/382 (2013.01); H01M 4/386 (2013.01); H01M 4/485 (2013.01); H01M 4/525 (2013.01); H01M 4/58 (2013.01); H01M 4/64 (2013.01); H01M 4/661 (2013.01); H01M 4/664 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An anode for an energy storage device comprising:
a current collector comprising a metal oxide layer;
a continuous porous lithium storage layer overlaying the metal oxide layer, wherein the continuous porous lithium storage layer is substantially free of nanostructures and comprises amorphous silicon deposited by a PECVD process;
a first supplemental layer overlaying the continuous porous lithium storage layer, the first supplemental layer comprising silicon nitride, silicon dioxide, silicon oxynitride, or a first metal compound; and
a second supplemental layer overlaying the first supplemental layer, wherein the second supplemental layer is characterized by a composition different than the first supplemental layer composition, and comprising silicon dioxide, silicon nitride, silicon oxynitride, or a second metal compound,
wherein one of the first supplemental layer or the second supplemental layer comprises titanium dioxide and has a thickness in a range of about 2 nm to about 50 nm.