US 11,658,268 B2
Light-emitting semiconductor structure and light-emitting semiconductor substrate
Hsin-Chiao Fang, Miaoli County (TW); Yen-Lin Lai, Miaoli County (TW); and Jyun-De Wu, Miaoli County (TW)
Assigned to PlayNitride Display Co., Ltd., Miaoli County (TW)
Filed by PlayNitride Display Co., Ltd., Miaoli County (TW)
Filed on Nov. 9, 2020, as Appl. No. 17/93,590.
Claims priority of application No. 109120894 (TW), filed on Jun. 19, 2020.
Prior Publication US 2021/0399174 A1, Dec. 23, 2021
Int. Cl. H01L 33/26 (2010.01); H01L 33/22 (2010.01)
CPC H01L 33/26 (2013.01) [H01L 33/22 (2013.01)] 9 Claims
OG exemplary drawing
1. A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, comprising:
a base comprising an upper surface;
a plurality of protrusions integrally formed with the base, the protrusions spaced apart from each other on the upper surface, each of the protrusions comprising at least one inclined surface; and
a plurality of particle groups embodied inside both the base and each of the protrusions dispersedly to be a discontinuous distribution, each of the particle groups comprising Sn, Sn compounds or combinations thereof.