US 11,658,267 B2
Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
Siddharth Rajan, Columbus, OH (US); Yuewei Zhang, Columbus, OH (US); Zane Jamal-Eddine, Columbus, OH (US); and Fatih Akyol, Corum/ Merkez (TR)
Assigned to Ohio State Innovation Foundation, Columbus, OH (US)
Filed by Ohio State Innovation Foundation, Columbus, OH (US)
Filed on Nov. 2, 2021, as Appl. No. 17/516,796.
Application 17/516,796 is a continuation of application No. 16/610,158, granted, now 11,211,525, previously published as PCT/US2018/030512, filed on May 1, 2018.
Claims priority of provisional application 62/492,460, filed on May 1, 2017.
Prior Publication US 2022/0059724 A1, Feb. 24, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01)
CPC H01L 33/20 (2013.01) [H01L 33/06 (2013.01); H01L 33/385 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A tunnel junction ultraviolet (UV) light emitting diode (LED), comprising:
a mesa structure comprising:
an n-doped bottom contact region,
a p-doped region,
a tunnel junction arranged in contact with the p-doped region, wherein a geometry of the mesa structure is configured to increase respective efficiencies of extracting transverse-electric (TE) polarized light and transverse-magnetic (TM) polarized light from the tunnel junction UV LED, and
an active region configured to emit UV light, the active region being arranged between the p-doped region and the n-doped bottom contact region;
an n-doped top contact region, wherein the tunnel junction is arranged between the n-doped top contact region and the p-doped region; and
a reflective material arranged on at least a portion of the inclined sidewall of the mesa structure, wherein the reflective material overlays at least a portion of the active region, and wherein the reflective material overlays at least a portion of the n-doped top contact region.