US 11,658,259 B2
Light emitting device
Jeonghwan Jang, Suwon-si (KR); Jae-Yoon Kim, Yongin-si (KR); Sungwon Ko, Suwon-si (KR); Junghee Kwak, Hwaseong-si (KR); Sangseok Lee, Seoul (KR); Suyeol Lee, Seongnam-si (KR); Seungwan Chae, Yongin-si (KR); and Pun Jae Choi, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 31, 2022, as Appl. No. 17/589,192.
Application 17/589,192 is a continuation of application No. 16/844,616, filed on Apr. 9, 2020, granted, now 11,239,385.
Claims priority of application No. 10-2019-0101797 (KR), filed on Aug. 20, 2019.
Prior Publication US 2022/0158023 A1, May 19, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/40 (2010.01); H01L 33/24 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/0016 (2013.01) [H01L 33/24 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a dielectric layer on the second semiconductor layer;
an n-contact on the first semiconductor layer; and
a plurality of p-contacts comprising a first p-contact and a plurality of second p-contacts on the second semiconductor layer,
wherein the first p-contact is closer to the n-contact than the plurality of second p-contacts,
wherein no p-contact is between the first p-contact and the n-contact, and
wherein, when viewed in plan, an area of the first p-contact is greater than an area of each of the plurality of second p-contacts.