US 11,658,258 B2
Device architectures having engineered stresses
Myles Aaron Steiner, Denver, CO (US)
Assigned to Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed by Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed on Sep. 24, 2021, as Appl. No. 17/484,578.
Claims priority of provisional application 63/083,177, filed on Sep. 25, 2020.
Prior Publication US 2022/0102578 A1, Mar. 31, 2022
Int. Cl. H01L 31/0304 (2006.01); H01L 31/0392 (2006.01); H01L 31/0735 (2012.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01)
CPC H01L 31/1892 (2013.01) [H01L 31/03046 (2013.01); H01L 31/0392 (2013.01); H01L 31/0735 (2013.01); H01L 31/1844 (2013.01); H01L 33/0062 (2013.01); H01L 33/0093 (2020.05); H01L 33/12 (2013.01); H01L 33/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing a spalling layer comprising a spalling triplet onto a substrate;
depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack; and
dividing the stack substantially at a plane positioned within the spalling layer to form a first portion comprising the substrate and a second portion comprising the device, wherein:
the spalling triplet comprises a first layer configured to provide a compressive stress, a second layer configured to provide a first tensile stress, and a third layer configured to provide a second tensile stress,
the first layer is positioned between the second layer and the third layer,
at least one of the first layer, the second layer, and the third layer form an interface,
the dividing at the plane occurs as result of the interface, and
the compressive stress, the first tensile stress, and the second tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.