US 11,658,254 B2
Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors
Faraz Najafi, San Jose, CA (US); Mark Thompson, Palo Alto, CA (US); Damien Bonneau, Bristol (GB); and Joaquin Matres Abril, Palo Alto, CA (US)
Assigned to PSIQUANTUM CORP., Palo Alto, CA (US)
Filed by PSIQUANTUM CORP., Palo Alto, CA (US)
Filed on Mar. 7, 2022, as Appl. No. 17/688,769.
Application 17/688,769 is a division of application No. 16/848,662, filed on Apr. 14, 2020, granted, now 11,271,125.
Application 16/848,662 is a continuation of application No. 16/228,441, filed on Dec. 20, 2018, granted, now 10,651,325, issued on May 12, 2020.
Claims priority of provisional application 62/608,524, filed on Dec. 20, 2017.
Prior Publication US 2022/0262969 A1, Aug. 18, 2022
Int. Cl. H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/109 (2006.01); H01L 39/24 (2006.01); G01J 1/42 (2006.01); H01L 39/10 (2006.01); G01J 1/44 (2006.01)
CPC H01L 31/035227 (2013.01) [G01J 1/42 (2013.01); G01J 1/44 (2013.01); H01L 31/02327 (2013.01); H01L 31/109 (2013.01); H01L 31/18 (2013.01); H01L 39/10 (2013.01); H01L 39/24 (2013.01); H01L 39/2416 (2013.01); G01J 2001/442 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A device, comprising:
a first semiconductor oxide layer;
a portion of a semiconductor layer disposed on the first semiconductor oxide layer;
a second semiconductor oxide layer including a first region disposed on the portion of the semiconductor layer and a second region disposed on the first semiconductor oxide layer, wherein a thickness of the first region of the second semiconductor oxide layer is less than a predefined thickness; and
one or more distinct regions of a superconducting layer disposed on the second semiconductor oxide layer over the portion of the semiconductor layer.