US 11,658,253 B2
High absorption photovoltaic material and methods of making the same
Ping Kuang, Latham, NY (US); Shawn Yu Lin, Troy, NY (US); Anthony Post, Catskill, NY (US); Sajeev Oommen John, Mississauga (CA); Sergey Leonidovich Eyderman, Toronto (CA); and Mei-Li Hsieh, Zhunan Township (TW)
Assigned to Rensselaer Polytechnic Institute, Troy, NY (US)
Filed by RENSSELAER POLYTECHNIC INSTITUTE, Troy, NY (US)
Filed on Nov. 18, 2020, as Appl. No. 16/951,541.
Application 16/951,541 is a continuation of application No. 16/099,081, abandoned, previously published as PCT/US2017/031556, filed on May 8, 2017.
Claims priority of provisional application 62/332,531, filed on May 6, 2016.
Prior Publication US 2021/0074867 A1, Mar. 11, 2021
Int. Cl. H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/02363 (2013.01) [H01L 31/02168 (2013.01); H01L 31/18 (2013.01); Y02E 10/52 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A high absorption photovoltaic material comprising:
a photovoltaic material including a photovoltaic material surface and an opposite second surface; and
a photonic crystal structure layer at said photovoltaic material surface, said photonic crystal layer including photonic crystal structures having an approximately inverse conical shape including an approximately Gaussian-shaped side wall having a gradient refractive index profile;
wherein said photonic crystal structures have a substantially simple cubic symmetry,
wherein the approximately Gaussian-shaped side wall has a shape defined as:

OG Complex Work Unit Math