US 11,658,244 B2
Semiconductor device structure
Lin-Yu Huang, Hsinchu (TW); Jia-Chuan You, Dayuan Township, Taoyuan County (TW); Chia-Hao Chang, Hsinchu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 19, 2021, as Appl. No. 17/379,446.
Application 17/379,446 is a division of application No. 16/548,423, filed on Aug. 22, 2019, granted, now 11,069,811.
Prior Publication US 2021/0351290 A1, Nov. 11, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/768 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
1. A semiconductor device structure, comprising:
a gate stack and a contact over a fin structure;
a gate spacer layer between the gate stack and the contact;
a first mask layer over the gate stack; and
a second mask layer over the contact, wherein the first mask layer includes a protruding portion sandwiched between an upper portion of the second mask layer and the gate spacer layer.