US 11,658,242 B2
Integrated assemblies containing diffusion alleviating two-dimensional materials
Kamal M. Karda, Boise, ID (US); Chandra Mouli, Boise, ID (US); and Haitao Liu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 11, 2021, as Appl. No. 17/524,653.
Application 17/524,653 is a division of application No. 16/542,078, filed on Aug. 15, 2019, granted, now 11,211,487.
Prior Publication US 2022/0069124 A1, Mar. 3, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01); H01L 27/108 (2006.01); H01L 29/45 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/267 (2006.01)
CPC H01L 29/7827 (2013.01) [H01L 27/10808 (2013.01); H01L 29/04 (2013.01); H01L 29/0684 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/267 (2013.01); H01L 29/456 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a semiconductor material having a more-doped region adjacent a less-doped region; and
a diffusion barrier region between the more-doped region and a portion of the less-doped region, the diffusion barrier region comprising multiple layers and having at least two distinct layers of two-dimensional material spaced from one another by an intervening region.