US 11,658,232 B2
Field effect transistor based on graphene nanoribbon and method for making the same
Tian-Fu Zhang, Beijing (CN); Li-Hui Zhang, Beijing (CN); Yuan-Hao Jin, Beijing (CN); Qun-Qing Li, Beijing (CN); and Shou-Shan Fan, Beijing (CN)
Assigned to Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed by Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed on Mar. 19, 2021, as Appl. No. 17/206,786.
Claims priority of application No. 202011447903.6 (CN), filed on Dec. 9, 2020.
Prior Publication US 2022/0181475 A1, Jun. 9, 2022
Int. Cl. H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 21/04 (2006.01)
CPC H01L 29/7606 (2013.01) [H01L 21/02527 (2013.01); H01L 21/02603 (2013.01); H01L 21/042 (2013.01); H01L 21/043 (2013.01); H01L 21/044 (2013.01); H01L 21/7806 (2013.01); H01L 29/0673 (2013.01); H01L 29/1606 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66045 (2013.01); H01L 29/78696 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for making a field effect transistor, comprising:
providing a graphene nanoribbon composite structure comprising a substrate and a plurality of graphene nanoribbons spaced apart from each other, wherein the plurality of graphene nanoribbons are located on the substrate and extend substantially along a same direction, the substrate comprises a plurality of protrusions are spaced apart from each other, each of the plurality of graphene nanoribbons is located between adjacent two of the plurality of protrusions and extends from one protrusion to adjacent protrusion, there is a protrusion between adjacent two of the plurality of graphene nanoribbons, and each of the plurality of graphene nanoribbons comprises a first end and a second end opposite to the first end; a method for making the graphene nanoribbon composite structure comprising:
providing the substrate comprising the plurality of protrusions spaced apart from each other;
growing a graphene film on a growth substrate;
placing an adhesive layer on a surface of the graphene film away from the growth substrate;
removing the growth substrate, and cleaning with water or an organic solvent;
combining the graphene film, the adhesive layer, and the substrate; and drying, so that a plurality of wrinkles are formed near the plurality of protrusions, to obtain a first composite structure; wherein the first composite structure comprises the substrate, the graphene film, and the adhesive layer; and the graphene film is between the adhesive layer and the sub state;
removing the adhesive layer to obtain a second composite structure comprising the substrate and the graphene film, wherein the graphene film is located on the substrate; and
etching the graphene film except for the plurality of wrinkles;
forming a source electrode on the first end, and forming a drain electrode on the second end, wherein the source electrode and the drain electrode are electrically connected to the plurality of graphene nanoribbons;
forming an insulating layer on the plurality of graphene nanoribbons, wherein the plurality of graphene nanoribbons are between the insulating layer and the substrate; and
forming a gate on a surface of the insulating layer away from the substrate.