US 11,658,229 B2
Semiconductor device and method for fabricating the same
Shih-Hsien Huang, Kaohsiung (TW); Sheng-Hsu Liu, Changhua County (TW); and Wen Yi Tan, Fujian (CN)
Assigned to United Semiconductor (Xiamen) Co., Ltd.
Filed by United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed on Jun. 29, 2020, as Appl. No. 16/914,503.
Claims priority of application No. 202010472945.9 (CN), filed on May 29, 2020.
Prior Publication US 2021/0376125 A1, Dec. 2, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/66636 (2013.01) [H01L 29/0847 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure on a substrate;
a first spacer adjacent to and directly contacting the gate structure and a second spacer adjacent to the first spacer;
a first epitaxial layer adjacent to the second spacer;
a second epitaxial layer on the first epitaxial layer and contacting a bottom surface of the second spacer directly, wherein a bottom surface of the second epitaxial layer comprises a first V-shape, a top surface of the second epitaxial layer comprises a second V-shape, and the top surface of the second epitaxial layer is even with a bottom surface of the first spacer; and
a third epitaxial layer on the second epitaxial layer and contacting a sidewall of the second spacer directly.