US 11,658,226 B2
Backside gate contact
Huan-Chieh Su, Changua County (TW); Chun-Yuan Chen, HsinChu (TW); Li-Zhen Yu, Hsinchu (TW); Lin-Yu Huang, Hsinchu (TW); Lo-Heng Chang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); and Chih-Hao Wang, Hsinchu County (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 13, 2021, as Appl. No. 17/228,955.
Claims priority of provisional application 63/151,228, filed on Feb. 19, 2021.
Prior Publication US 2022/0271138 A1, Aug. 25, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 21/823475 (2013.01); H01L 29/0665 (2013.01); H01L 29/42356 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
1. A semiconductor structure, comprising:
first nanostructures;
a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure;
a dielectric fin disposed on the isolation structure and in contact with a sidewall of the first gate structure; and
a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure,
wherein a bottom surface of the first gate structure is in direct contact with the backside gate contact.