US 11,658,221 B2
Backside contact structures and fabrication for metal on both sides of devices
Patrick Morrow, Portland, OR (US); Rishabh Mehandru, Portland, OR (US); Aaron D. Lilak, Beaverton, OR (US); and Kimin Jun, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Nov. 9, 2021, as Appl. No. 17/522,764.
Application 16/999,508 is a division of application No. 15/747,119, granted, now 10,784,358, issued on Sep. 22, 2020, previously published as PCT/US2015/052440, filed on Sep. 25, 2015.
Application 17/522,764 is a continuation of application No. 16/999,508, filed on Aug. 21, 2020, granted, now 11,201,221.
Prior Publication US 2022/0069094 A1, Mar. 3, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/823431 (2013.01); H01L 27/1266 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/6653 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 21/2254 (2013.01); H01L 21/26513 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a semiconductor body having a top, a bottom, a first side and a second side, the first side and the second side between the top and the bottom, and the first side opposite the second side;
a gate structure over the top and extending along the first side and the second side of the semiconductor body;
a first source or drain structure in the semiconductor body at a first side of the gate structure;
a second source or drain structure in the semiconductor body at a second side of the gate structure, the second side opposite the first side; and
a conductive contact on the bottom of the semiconductor body at a location vertically beneath the first source or drain structure.