US 11,658,218 B2
P-type dipole for p-FET
Yongjing Lin, San Jose, CA (US); Karla M Bernal Ramos, San Jose, CA (US); Shih Chung Chen, Cupertino, CA (US); Yixiong Yang, Fremont, CA (US); Lin Dong, San Jose, CA (US); Steven C. H. Hung, Sunnyvale, CA (US); and Srinivas Gandikota, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 10, 2022, as Appl. No. 17/668,992.
Application 17/668,992 is a continuation of application No. 17/034,116, filed on Sep. 28, 2020, granted, now 11,289,579.
Claims priority of provisional application 63/027,522, filed on May 20, 2020.
Claims priority of provisional application 62/907,668, filed on Sep. 29, 2019.
Prior Publication US 2022/0165854 A1, May 26, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01)
CPC H01L 29/408 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02153 (2013.01); H01L 21/28158 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/7851 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing an electronic device, the method comprising:
depositing an interlayer dielectric on a top surface of a channel located between a source and a drain on a substrate;
depositing a high-κ dielectric material on the interlayer dielectric;
depositing a dipole layer on the high-κ dielectric material, the dipole layer comprising one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), and titanium aluminum carbide (TiAlC), wherein the dipole layer is formed by exposing the substrate to alternating cycles of a titanium precursor, ammonia (NH3), and a dipole precursor at a temperature in a range of about 200° C. to about 500° C.;
depositing a capping layer in situ; and
thermally annealing the device.