US 11,658,217 B2
Transistors with ion- or fixed charge-based field plate structures
Han Wui Then, Portland, OR (US); Marko Radosavljevic, Portland, OR (US); Glenn A. Glass, Portland, OR (US); Sansaptak Dasgupta, Hillsboro, OR (US); Nidhi Nidhi, Hillsboro, OR (US); Paul B. Fischer, Portland, OR (US); Rahul Ramaswamy, Portland, OR (US); Walid M. Hafez, Portland, OR (US); and Johann Christian Rode, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 8, 2019, as Appl. No. 16/242,670.
Prior Publication US 2020/0219986 A1, Jul. 9, 2020
Int. Cl. H01L 29/00 (2006.01); H01L 29/40 (2006.01); H01L 21/265 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01)
CPC H01L 29/405 (2013.01) [H01L 21/265 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/408 (2013.01); H01L 29/7786 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a transistor, including:
a channel material,
a gate electrode, and
a drain electrode;
a dielectric material, between the gate electrode and the drain electrode; and
a region within the dielectric material, the region including a plurality of ions and being laterally confined between the gate electrode and the drain electrode.