US 11,658,213 B2
Superlattice films for photonic and electronic devices
Robert P. H. Chang, Glenview, IL (US); and Woongkyu Lee, Evanston, IL (US)
Assigned to Northwestern University, Evanston, IL (US)
Appl. No. 17/254,499
Filed by Northwestern University, Evanston, IL (US)
PCT Filed Jun. 24, 2019, PCT No. PCT/US2019/038721
§ 371(c)(1), (2) Date Dec. 21, 2020,
PCT Pub. No. WO2019/246618, PCT Pub. Date Dec. 26, 2019.
Claims priority of provisional application 62/688,812, filed on Jun. 22, 2018.
Prior Publication US 2021/0126091 A1, Apr. 29, 2021
Int. Cl. H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01)
CPC H01L 29/152 (2013.01) [H01L 21/02175 (2013.01); H01L 21/02565 (2013.01); H01L 29/24 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for preparing a superlattice, the method comprising:
(a) providing a chamber having a first material and a second material therein;
(b) positioning the first material in an irradiation zone within the chamber;
(c) irradiating the first material in the irradiation zone for an effective time to deposit a layer of the first material at a first deposition rate;
(d) positioning the second material in the irradiation zone;
(e) irradiating the second material in the irradiation zone for an effective time to deposit a layer of the second material at a second deposition rate; and
(f) repeating steps (b)-(e) a multiplicity of times, thereby forming an alternating superlattice of layers of the first material and the second material,
wherein the ratio of the first deposition rate to the second deposition rate is between 1.0:2.0 and 2.0:1.0 and
wherein the first material is selected from a crystalline semiconductive material and the second material is selected from an amorphous insulating material.