US 11,658,193 B2
Image sensor
Kang Sun Lee, Hwaseong-si (KR); Seung Ho Shin, Asan-si (KR); Hyung Jin Bae, Suwon-si (KR); Jin Ho Seo, Seoul (KR); Ji Hun Shin, Seongnam-si (KR); Moo Sup Lim, Yongin-si (KR); Young Tae Jang, Pyeongtaek-si (KR); and Young Kyun Jeong, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 8, 2021, as Appl. No. 17/521,218.
Application 17/521,218 is a continuation of application No. 16/840,663, filed on Apr. 6, 2020, granted, now 11,189,651.
Application 16/840,663 is a continuation of application No. 16/218,704, filed on Dec. 13, 2018, granted, now 10,714,517, issued on Jul. 14, 2020.
Claims priority of application No. 10-2018-0008297 (KR), filed on Jan. 23, 2018; application No. 10-2018-0060446 (KR), filed on May 28, 2018; and application No. 10-2018-0110823 (KR), filed on Sep. 17, 2018.
Prior Publication US 2022/0059588 A1, Feb. 24, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 5/355 (2011.01); H04N 5/353 (2011.01); H04N 5/3745 (2011.01); H01L 31/0203 (2014.01)
CPC H01L 27/14616 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14634 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H04N 5/353 (2013.01); H04N 5/3559 (2013.01); H04N 5/35563 (2013.01); H04N 5/37457 (2013.01); H01L 27/14656 (2013.01); H01L 31/0203 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a pixel array including a plurality of pixels; and
a logic circuit configured to obtain a pixel signal from the pixel array,
wherein each of the plurality of pixels comprises:
a first photodiode;
a second photodiode;
a floating diffusion node configured to accumulate electric charges generated from the first photodiode and the second photodiode and directly connected to a gate node of a first transistor;
a second transistor connected to the first photodiode;
a third transistor and a fourth transistor that are serially connected between the floating diffusion node and the second photodiode;
a fifth transistor connected between the floating diffusion node and a power node; and
as sixth transistor configured to be connected between the power node and the second photodiode.