US 11,658,176 B2
ESD protection device with deep trench isolation islands
Zaichen Chen, Champaign, IL (US); Akram A. Salman, Plano, TX (US); and Binghua Hu, Plano, TX (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Sep. 28, 2020, as Appl. No. 17/35,662.
Application 17/035,662 is a continuation of application No. 16/198,506, filed on Nov. 21, 2018, granted, now 10,790,275.
Prior Publication US 2021/0013193 A1, Jan. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/00 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01)
CPC H01L 27/0259 (2013.01) [H01L 21/26513 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/66234 (2013.01); H01L 29/732 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/3212 (2013.01); H01L 21/76877 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a semiconductor substrate having a first conductivity type;
an emitter and a base formed within the semiconductor substrate;
a deep-doped region having a second opposite conductivity type, the deep-doped region extending to a buried layer having the second conductivity type;
an array of deep trench islands within the deep-doped region, the deep trench islands conductively isolated from the buried layer; and
a collector formed within the semiconductor substrate such that current between the collector and the emitter passes between the deep trench islands.