US 11,658,173 B2
Stacked dies and methods for forming bonded structures
Cyprian Emeka Uzoh, San Jose, CA (US); Arkalgud R. Sitaram, Cupertino, CA (US); and Paul Enquist, Cary, NC (US)
Assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Dec. 22, 2020, as Appl. No. 17/131,329.
Application 17/131,329 is a continuation of application No. 16/270,466, filed on Feb. 7, 2019, granted, now 10,879,226.
Application 16/270,466 is a continuation of application No. 15/159,649, filed on May 19, 2016, granted, now 10,204,893, issued on Feb. 12, 2019.
Prior Publication US 2021/0183847 A1, Jun. 17, 2021
Int. Cl. H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/683 (2006.01); H01L 25/065 (2006.01)
CPC H01L 25/50 (2013.01) [H01L 21/304 (2013.01); H01L 21/306 (2013.01); H01L 21/3081 (2013.01); H01L 21/561 (2013.01); H01L 21/683 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/351 (2013.01); H01L 2924/3511 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A method for forming a bonded structure, the method comprising:
mounting a first side of a first singulated integrated device die to a carrier, the first singulated integrated device die comprising a conductive via extending at least partially through the first singulated integrated device die;
after mounting,
providing a protective material comprising a first layer on the first integrated device die; and
after providing the protective material, thinning the first integrated device die from a second side opposite the first side to expose the conductive via.