US 11,658,167 B2
Display panel and display device
Zeshang He, Shanghai (CN); and Shaorong Yu, Shanghai (CN)
Assigned to Shanghai Tianma Micro-Electronics Co., Ltd., Shanghai (CN)
Filed by Shanghai Tianma Micro-Electronics Co., Ltd., Shanghai (CN)
Filed on Dec. 27, 2019, as Appl. No. 16/728,940.
Claims priority of application No. 201910251996.6 (CN), filed on Mar. 29, 2019.
Prior Publication US 2020/0312831 A1, Oct. 1, 2020
Int. Cl. H01L 25/18 (2023.01); H01L 27/12 (2006.01)
CPC H01L 25/18 (2013.01) [H01L 27/124 (2013.01); H01L 27/1255 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a substrate, a micro Light Emitting Diode (LED), and a driving circuit,
wherein the micro LED and the driving circuit are disposed on a same side of the substrate, and the driving circuit is located between the micro LED and the substrate;
wherein the driving circuit comprises a first thin film transistor, an insulating layer and a metal structure, wherein a source of the first thin film transistor and a drain of the first thin film transistor are disposed in a source-drain layer, the metal structure is disposed between the substrate and the source-drain layer, the insulating layer is disposed between the source-drain layer and the metal structure, and an active layer of the first thin film transistor is disposed between the insulating layer and the substrate;
wherein the micro LED comprises a first electrode, an LED semiconductor structure and a second electrode, and the first electrode and the second electrode disposed on a same side of the LED semiconductor structure along a direction perpendicular to the substrate and are both disposed between the LED semiconductor structure and the first thin film transistor;
wherein the display panel further comprises a light shielding structure disposed between the active layer of the first thin film transistor and the substrate, the light shielding structure is overlapped with the active layer of the first thin film transistor, the light shielding structure and the metal structure are arranged in a same layer and are spaced apart from each other;
wherein the source of the first thin film transistor is electrically connected to the first electrode of the micro LED, the source of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; or, wherein the drain of the first thin film is electrically connected to the first electrode of the micro LED, the drain of the first thin film transistor is electrically connected to the active layer at a first position through a first connection portion penetrating through the insulating layer and is electrically connected to the metal structure at a second position through a second connection portion penetrating through the insulating layer, and the first position and the second position do not overlap; and
wherein the metal structure is used as a heat dissipation structure for the micro LED.