US 11,658,126 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Jin Young Khim, Seoul (KR); Won Chul Do, Seoul (KR); Sang Hyoun Lee, Incheon (KR); Ji Hun Yi, Gyeonggi-do (KR); and Ji Yeon Ryu, Incheon (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Mar. 17, 2020, as Appl. No. 16/821,899.
Prior Publication US 2021/0296248 A1, Sep. 23, 2021
Int. Cl. H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first redistribution layer (RDL) substrate comprising:
a first dielectric structure; and
a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers;
an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure;
a body over a top side of the first RDL substrate, wherein the electronic component is in the body;
a second RDL substrate comprising:
a second dielectric structure over the body; and
a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers; and
an internal interconnect coupled between the first conductive structure and the second conductive structure;
wherein:
the first conductive structure comprises a conductive path comprising a trace and a downward via extending downward from the trace, wherein the downward via and the trace comprise a same metallic layer;
the second conductive structure comprises a conductive path comprising a trace and an upward via extending upward from the trace, wherein the upward via and the trace comprise a same metallic layer; and
the body directly contacts the first RDL substrate and directly contacts the second RDL substrate.