US 11,658,120 B2
Porogen bonded gap filling material in semiconductor manufacturing
Bo-Jiun Lin, Hsinchu County (TW); Ching-Yu Chang, Hsin-Chu (TW); Hai-Ching Chen, Hsinchu (TW); and Tien-I Bao, Taoyuan County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 14, 2020, as Appl. No. 17/120,672.
Application 17/120,672 is a division of application No. 15/942,947, filed on Apr. 2, 2018, granted, now 10,867,922.
Application 15/942,947 is a division of application No. 14/752,097, filed on Jun. 26, 2015, granted, now 9,941,157, issued on Apr. 10, 2018.
Prior Publication US 2021/0098378 A1, Apr. 1, 2021
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01); H01L 23/528 (2006.01); H01L 23/58 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/7682 (2013.01); H01L 21/76837 (2013.01); H01L 23/3178 (2013.01); H01L 23/3185 (2013.01); H01L 23/485 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 23/585 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 2221/1047 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
a first layer over the substrate, the first layer including a plurality of fin features and a trench between two adjacent fin features; and
a dielectric material layer having a first portion and a second portion, the first portion disposed in the trench, the second portion disposed on a top surface of the first layer, wherein the dielectric material layer comprises Si, O, and C elements,
wherein percentages of the Si element in the first portion and the second portion differ by less than 10%, percentages of the O element in the first portion and the second portion differ by less than 10%, and percentage of the C element in the first portion and the second portion differ by less than 10%, which is produced by a process that includes:
applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix before the first material is applied, wherein the porogen includes a

OG Complex Work Unit Chemistry
 the porogen is chemically bonded with the matrix through a Si—O—[CH2CH2O]x bond; and
curing the first material to form the dielectric material layer.