US 11,658,118 B2
Transistor structure in low noise amplifier
Purakh Raj Verma, Singapore (SG); Chia-Huei Lin, Hsinchu (TW); and Kuo-Yuh Yang, Hsinchu County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 8, 2021, as Appl. No. 17/520,725.
Application 16/122,897 is a division of application No. 15/893,676, filed on Feb. 11, 2018, granted, now 10,600,734, issued on Mar. 24, 2020.
Application 17/520,725 is a continuation of application No. 16/122,897, filed on Sep. 6, 2018, granted, now 11,201,115.
Claims priority of application No. 201810035168.4 (CN), filed on Jan. 15, 2018.
Prior Publication US 2022/0059459 A1, Feb. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01); H03F 3/16 (2006.01); H01L 21/321 (2006.01); H01L 21/84 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 27/1203 (2013.01); H01L 27/124 (2013.01); H01L 29/0847 (2013.01); H01L 29/4232 (2013.01); H01L 29/7835 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 21/84 (2013.01); H01L 29/45 (2013.01); H03F 3/16 (2013.01); H03F 2200/294 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first gate line and a second gate line extending along a first direction;
a third gate line extending along a second direction and between and directly contacting the first gate line and the second gate line, wherein the third gate line comprises a first protrusion;
a drain region adjacent to one side of the third gate line, wherein the first protrusion of the third gate line overlaps the drain region;
a fourth gate line extending along the second direction and between and directly contacting the first gate line and the second gate line, wherein the first gate line directly contacting the third gate line contacts the first gate line directly contacting the fourth gate line directly, the fourth gate line comprises a second protrusion and the first protrusion and the second protrusion not contacting each other directly; and
a first metal interconnection extending along the second direction between the third gate line and the fourth gate line, wherein the first metal interconnection extending along the second direction overlaps the first protrusion and the second protrusion.