US 11,658,115 B2
Semiconductor device with copper-manganese liner and method for forming the same
Chin-Ling Huang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 26, 2021, as Appl. No. 17/240,287.
Prior Publication US 2022/0344261 A1, Oct. 27, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 23/525 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 23/53238 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode and a second electrode disposed in a first dielectric layer;
a first liner separating the first electrode from the first dielectric layer; and
a fuse link disposed in the first dielectric layer, wherein the fuse link is disposed between and electrically connected to the first electrode and the second electrode, and wherein the fuse link and the first liner are formed of a lining material including copper-manganese (CuMn), wherein the first liner, the fuse link are physically connected to form a continuous structure.