US 11,658,091 B2
Methods of manufacturing semiconductor packaging device and heat dissipation structure
Jia-Liang Chen, Hsinchu (TW); Chi-Ming Yang, Hsinchu (TW); and Yen-Chao Lin, Hsinchu (TW)
Assigned to GLOBAL UNICHIP CORPORATION, Hsinchu (TW); and TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by GLOBAL UNICHIP CORPORATION, Hsinchu (TW); and TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/815,950.
Application 17/815,950 is a division of application No. 17/219,913, filed on Apr. 1, 2021, granted, now 11,450,586.
Claims priority of application No. 110105549 (TW), filed on Feb. 18, 2021.
Prior Publication US 2022/0367313 A1, Nov. 17, 2022
Int. Cl. H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/3675 (2013.01) [H01L 21/4882 (2013.01); H01L 21/563 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 23/3735 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/81 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/17519 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/33519 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/92242 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor packaging device, comprising:
(a) soldering a working chip on one surface of a wiring board so that a working circuit inbuilt inside a chip body of the working chip is electrically connected to the wiring board, wherein the wiring board comprises a plurality of solder joints, the chip body comprises a plurality of second solder bumps and a plurality of solder balls respectively disposed on two opposite surfaces of the chip body, and the solder balls are electrically connected to the solder joints of the wiring board;
(b) soldering a silicon thermal conductivity element on one surface of a heat-dissipating metal lid, wherein the silicon thermal conductivity element comprises a silicon body, a plurality of thermal conduction channels arranged abreast in the silicon body, a thermally-conductive layer disposed on one surface of the silicon body and thermally coupled to the thermal conduction channels and the heat-dissipating metal lid, and a plurality of first solder bumps disposed on the other surface of the silicon body and thermally coupled to the thermal conduction channels, respectively; and
(c) fixedly covering the heat-dissipating metal lid on the wiring board such that the silicon thermal conductivity element is sandwiched between the chip body and the heat-dissipating metal lid,
wherein the first solder bumps are respectively soldered to the second solder bumps, and are electrically isolated from the working circuit and the wiring board.