US 11,658,088 B2
Structures and methods for heat dissipation of semiconductor devices
S. L. Chen, Hsin-Chu (TW); Chen-Hsuan Yen, Taichung (TW); and Han-Tang Lo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jan. 22, 2021, as Appl. No. 17/156,164.
Application 17/156,164 is a continuation of application No. 15/788,696, filed on Oct. 19, 2017, granted, now 10,910,290.
Prior Publication US 2021/0143078 A1, May 13, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/367 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/367 (2013.01) [H01L 21/76877 (2013.01); H01L 23/3677 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a plurality of semiconductor devices embedded in a device region;
at least one thermal conductor embedded in the device region;
a plurality of vertical interconnect accesses (vias) each of which is disposed in the device region and thermally couples the at least one thermal conductor to at least one surface of the semiconductor structure,
wherein the plurality of semiconductor devices and the plurality of vias share the following layers in a same order from bottom to top:
a contact layer formed of a first metal material,
a plurality of metal layers formed of a second metal material and formed on the contact layer, and
a top layer formed of a third metal material and formed on the plurality of metal layers, wherein the first metal material, the second metal material and the third metal material are different from each other.