US 11,658,087 B2
High resistivity wafer with heat dissipation structure and method of making the same
Purakh Raj Verma, Singapore (SG); Kuo-Yuh Yang, Hsinchu County (TW); and Chia-Huei Lin, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Oct. 27, 2020, as Appl. No. 17/80,858.
Application 17/080,858 is a division of application No. 16/170,067, filed on Oct. 25, 2018, granted, now 10,854,529.
Claims priority of application No. 201811105431.9 (CN), filed on Sep. 21, 2018.
Prior Publication US 2021/0043534 A1, Feb. 11, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/367 (2006.01); H01L 21/48 (2006.01)
CPC H01L 23/367 (2013.01) [H01L 21/4803 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A fabricating method of a semiconductor structure with a heat dissipation structure, comprising:
providing a device wafer and a high resistivity wafer, wherein the high resistivity wafer consists of an insulating material, the device wafer comprises a device region and an edge region, a semiconductor device is disposed within the device region, the high resistivity wafer comprises a heat dissipation region and a device support region, and the heat dissipation region surrounds the device region;
forming a metal structure in the high resistivity wafer, wherein the metal structure is embedded only in the heat dissipation region; and
after forming the metal structure, performing a bonding process to bond the device wafer and the high resistivity wafer, and make the device region entirely overlap the device support region.