US 11,658,074 B2
Structure and method for FinFET device with source/drain modulation
Ta-Chun Lin, Hsinchu (TW); Kuo-Hua Pan, Hsinchu (TW); and Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Apr. 8, 2021, as Appl. No. 17/225,904.
Prior Publication US 2022/0328361 A1, Oct. 13, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a workpiece having a semiconductor substrate with a first circuit area and a second circuit area;
forming a first active region within the first circuit area and a second active region within the second circuit area;
forming a first gate structure on the first active region and a second gate structure on the second active region, the first gate structure having first gate stacks with a first gate spacing and the second gate structure having second gate stacks with a second gate spacing different from the first gate spacing;
forming a first patterned mask covering the second active region;
introducing a doping species to the first active region while second active region is covered by the first patterned mask;
removing the first patterned mask;
performing an etching process, thereby simultaneously recessing both first source/drain regions of the first active region and second source/drain regions of the second active region; and
thereafter, epitaxially growing first source/drain features within the first source/drain regions and second source/drain features within the second source/drain regions.